The realization of delta-sigma A/D converters in low-voltage digital CMOS technology

Author

Grilo, Jorge ; Huang, Yunteng ; Temes, Gabor C.

Author_Institution

Rockwell Semicond. Syst., Newport Beach, CA, USA

Volume

fYear

1997

fDate

3-6 Aug 1997

Firstpage

172

Abstract

This paper discusses the design of high-linearity analog CMOS circuits in basic digital CMOS technology, which allows only low supply voltages and has a single polysilicon layer. The key design issues are described, and illustrated with the design details of two delta-sigma ADCs. The first features a very low (1.8 V) supply voltage and a 94 dB dynamic range, while the second one contains only MOSFETs, no capacitors or resistors, and achieved 94 dB peak S/THD and SNR

Keywords

CMOS integrated circuits; integrated circuit noise; sigma-delta modulation; 1.8 V; MOSFETs; S/THD; SNR; Si; delta-sigma A/D converters; dynamic range; high-linearity analog CMOS circuits; low supply voltages; low-voltage digital CMOS technology; polysilicon layer; CMOS analog integrated circuits; CMOS digital integrated circuits; CMOS technology; Capacitors; Clocks; Delta modulation; Dynamic range; MOSFETs; Modulation coding; Operational amplifiers;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems, 1997. Proceedings of the 40th Midwest Symposium on

Conference_Location

Sacramento, CA

Print_ISBN

0-7803-3694-1

Type

conf

DOI

10.1109/MWSCAS.1997.666061

Filename

666061

Link To Document

https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2177263