DocumentCode :
2177288
Title :
Method of raising the upper level frequency limit of wide-band amplifier
Author :
Prokopenko, Nikolai N. ; Starchenko, Eugeny I.
Author_Institution :
Radiotechnik Dept., Fed. Univ. of Econ. & Service of South Russia, Russia
fYear :
2002
fDate :
2002
Firstpage :
24
Lastpage :
27
Abstract :
The principles of transistor amplifier building which can be classified as cascode circuits are observed. The analysis is made on the basis of general structure. And the opportunity to have an increase of amplification in comparison with traditional amplifiers is shown. It is achieved by compensation of collector-base transistor capacitance. The variants of circuit and technological realization of wide-band amplifiers in one of several types of conduction transistors, in functional integrated bipolar and field-effect transistor and in differential cascades, are given.
Keywords :
bipolar analogue integrated circuits; capacitance; compensation; field effect analogue integrated circuits; video amplifiers; wideband amplifiers; bipolar transistor; cascode circuits; collector-base transistor capacitance; compensation; conduction transistors; field-effect transistor; upper level frequency limit; wide-band amplifier; Broadband amplifiers; Buildings; Capacitance; Circuits; FETs; Frequency; Minimization methods; Radiofrequency amplifiers; Servomechanisms; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Circuits and Systems for Communications, 2002. Proceedings. ICCSC '02. 1st IEEE International Conference on
Print_ISBN :
5-7422-0260-1
Type :
conf
DOI :
10.1109/OCCSC.2002.1029035
Filename :
1029035
Link To Document :
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