Method of raising the upper level frequency limit of wide-band amplifier

Author

Prokopenko, Nikolai N. ; Starchenko, Eugeny I.

Author_Institution

Radiotechnik Dept., Fed. Univ. of Econ. & Service of South Russia, Russia

fYear

2002

fDate

2002

Firstpage

24

Lastpage

27

Abstract

The principles of transistor amplifier building which can be classified as cascode circuits are observed. The analysis is made on the basis of general structure. And the opportunity to have an increase of amplification in comparison with traditional amplifiers is shown. It is achieved by compensation of collector-base transistor capacitance. The variants of circuit and technological realization of wide-band amplifiers in one of several types of conduction transistors, in functional integrated bipolar and field-effect transistor and in differential cascades, are given.

Keywords

bipolar analogue integrated circuits; capacitance; compensation; field effect analogue integrated circuits; video amplifiers; wideband amplifiers; bipolar transistor; cascode circuits; collector-base transistor capacitance; compensation; conduction transistors; field-effect transistor; upper level frequency limit; wide-band amplifier; Broadband amplifiers; Buildings; Capacitance; Circuits; FETs; Frequency; Minimization methods; Radiofrequency amplifiers; Servomechanisms; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems for Communications, 2002. Proceedings. ICCSC '02. 1st IEEE International Conference on

Print_ISBN

5-7422-0260-1

Type

conf

DOI

10.1109/OCCSC.2002.1029035

Filename

1029035