Title :
A high-efficiency power amplifier using GaN HEMTs
Author :
Wang, Youzhen ; Wang, Pinglian
Author_Institution :
Dept. of Space Sci. & Applic., Acad. of Opto-Electron., Beijing, China
Abstract :
This paper reports a high efficiency power amplifier using a gallium nitride high electron mobility transistor(GaN HEMT), which is designed at the L band of 1.5GHz. To improve output power and efficiency by suppressing harmonic powers, input and output matching network using transmission lines are designed. For the center frequency 1.5GHz, the added efficiency (PAE) of 67.43% with a power gain of 13.37dB is achieved at an output power of 46.17dBm. The broadband performance with a power gain over 12dB and PAE over 60% is maintained through 20MHz.
Keywords :
gallium compounds; high electron mobility transistors; power amplifiers; transmission lines; GaN HEMT; gallium nitride high electron mobility transistor; harmonic power suppression; high efficiency power amplifier; high-efficiency power amplifier; input matching network; output matching network; transmission lines; Gallium nitride; HEMTs; Impedance matching; MODFETs; Power amplifiers; Power generation; Power transmission lines; GaN HEMT; high efficiency; high power amplifier;
Conference_Titel :
Electronics, Communications and Control (ICECC), 2011 International Conference on
Conference_Location :
Ningbo
Print_ISBN :
978-1-4577-0320-1
DOI :
10.1109/ICECC.2011.6066637
