Design of a 10.7 MHz band-pass ΣΔ modulator: a comparison between CMOS and BiCMOS technologies

Author

Francesconi, Fabrizio ; Liberali, Valentino ; Magani, Paolo ; Maloberti, Franco

Author_Institution

Micronova Sistemi, Pavia, Italy

Volume

1

fYear

1997

fDate

3-6 Aug 1997

Firstpage

281

Abstract

This paper illustrates the design of a 10.7 MHz band-pass sigma-delta modulator for intermediate frequency demodulation in digital radio systems. The modulator has been designed in two different technologies: 1.2 μm BiCMOS and 1.2 μm CMOS. Circuit solutions with numerical simulations are presented and discussed. The band-pass modulator can be realized in monolithic technology using the pseudo-N-path approach, thus implementing a second-order transfer function using only one operational amplifier. In both technologies, the modulator signal-to-noise ratio is approximately 48 dB over a band of 200 kHz centered around 10.7 MHz, corresponding to 8 bits of resolution after decimation

Keywords

BiCMOS integrated circuits; CMOS integrated circuits; demodulation; digital radio; mixed analogue-digital integrated circuits; modulators; sigma-delta modulation; 1.2 micron; 10.7 MHz; 200 kHz; 48 dB; BiCMOS technology; CMOS technology; IF demodulation; SNR; band-pass ΣΔ modulator; digital radio systems; intermediate frequency demodulation; monolithic technology; operational amplifier; pseudo-N-path approach; second-order transfer function; signal-to-noise ratio; single op amp configuration; BiCMOS integrated circuits; CMOS technology; Delta-sigma modulation; Demodulation; Digital communication; Digital modulation; Frequency modulation; Numerical simulation; Operational amplifiers; Transfer functions;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems, 1997. Proceedings of the 40th Midwest Symposium on

Conference_Location

Sacramento, CA

Print_ISBN

0-7803-3694-1

Type

conf

DOI

10.1109/MWSCAS.1997.666088

Filename

666088