• DocumentCode
    2178139
  • Title

    Investigation of the sensitivity, selectivity, and reversibility of the chemically-sensitive field-effect transistor (CHEMFET) to detect NO 2, C3H9PO3, and BF3

  • Author

    Bright, Victor M. ; Kolesar, Edward S. ; Hauschild, Neal T.

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Air Force Inst. of Technol., Wright-Patterson AFB, OH, USA
  • fYear
    1994
  • fDate
    23-27 May 1994
  • Firstpage
    342
  • Abstract
    The sensitivity, selectivity, and reversibility of a CHEMFET gas microsensor were investigated as a function of several physical operating parameters. The CHEMFET´s responses were expressed based upon the changes generated by modulating the electrical conductivity of the microsensor´s thin-film, metal-doped, phthalocyanine-coated interdigitated gate electrode when exposed to a family of challenge gases. Copper phthalocyanine (CuPc) and lead phthalocyanine (PbPc) were used as the chemically-sensitive thin-films which ranged in thicknesses from 250 Å to 1100 Å. The challenge gases included: nitrogen dioxide (NO2), dimethyl methylphosphonate (C3H9PO3), boron trifluoride (BF3 ), methanol (CH3OH), carbon monoxide (CO), vinyl chloride (CH2CHCl), and trichloroethylene (C2HCl 3). The concentrations of the gases ranged from 10 parts-per-billion (ppb) to 50 parts-per-million (ppm). Tests performed at at 22°C and 110°C (70°C for the latter four gases) revealed that CuPc was more sensitive to C3H9PO 3 and BF3, whereas PbPc was more sensitive to NO 2, CH3OH, CO, CH2CHCl, and C2HCl3. The CHEMFET was also moderately selective when challenged with several binary challenge gas mixtures. The metal-doped phthalocyanine thin films were most selective to NO2 , followed by C3H9PO3. The CHEMFET was not as selective for BF3 when combined with several other challenge gases. The CHEMFET was totally reversible for both thin-film candidates and all challenge gases
  • Keywords
    chemical variables measurement; electric sensing devices; gas sensors; insulated gate field effect transistors; nitrogen compounds; organic compounds; 250 to 1100 A; BF3; CHEMFET; CO; CuPc; NO2; PbPc; binary challenge gas mixtures; chemically-sensitive field-effect transistor; dimethyl methylphosphonate; electrical conductivity; gas microsensor; metal-doped phthalocyanine thin films; methanol; reversibility; selectivity; sensitivity; thin-film phthalocyanine-coated interdigitated gate electrode; trichloroethylene; vinyl chloride; Boron; Chemicals; Conductivity; Copper; Electrodes; Gases; Lead; Microsensors; Nitrogen; Transistors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Aerospace and Electronics Conference, 1994. NAECON 1994., Proceedings of the IEEE 1994 National
  • Conference_Location
    Dayton, OH
  • Print_ISBN
    0-7803-1893-5
  • Type

    conf

  • DOI
    10.1109/NAECON.1994.332987
  • Filename
    332987