Title :
A 1.2 μ BiCMOS realization of delta-sigma modulator with integrator using unity-gain buffer
Author :
Llaser, N. ; Megherbi, S. ; Põne, J.H.
Author_Institution :
Inst. d´´Electron. Fondamentale, Univ. de Paris-Sud, Orsay, France
Abstract :
In this paper, a delta sigma modulator using a unity-gain buffer is presented. The advantage of using unity-gain buffer is to permit the increase of their sampling frequency. The delta sigma modulator is realized in a 1.2 μm BiCMOS technology. The result of testing validates the feasibility of the delta sigma converter with this structure and shows at the same time its limits and disadvantages
Keywords :
BiCMOS integrated circuits; buffer circuits; integrating circuits; mixed analogue-digital integrated circuits; modulators; sigma-delta modulation; 1.2 micron; BiCMOS realization; delta-sigma modulator; integrator; sampling frequency; unity-gain buffer; BiCMOS integrated circuits; Capacitors; Delta modulation; Delta-sigma modulation; Frequency; Parasitic capacitance; Sampling methods; Switches; Testing; Voltage;
Conference_Titel :
Circuits and Systems, 1997. Proceedings of the 40th Midwest Symposium on
Conference_Location :
Sacramento, CA
Print_ISBN :
0-7803-3694-1
DOI :
10.1109/MWSCAS.1997.666093
