DocumentCode
2178426
Title
High level model of SPAD based pixel
Author
Kazma, Rabih ; Rossetto, Olivier ; Sicard, Gilles
Author_Institution
Univ. Grenoble Alpes, LPSC, CNRS/IN2P3, F-38026, Grenoble
fYear
2015
fDate
June 29 2015-July 2 2015
Firstpage
125
Lastpage
128
Abstract
In this paper, a high level model of pixel containing a single photon avalanche photodiode (SPAD) followed by its readout circuit based on an analog counter is presented. This model takes into account the natural sources of photon (light sources) and dedicated noise. The photon distribution follows Poisson law process and the noise effect is modeled by a pulse sources. Figures of merit characterize the performance of SPAD, Photon Detection Probability (PDP), Dark Count Rate (DCR), Afterpulsing and Dead Time (DT) are taken into account in our model. The goal is to have a high level model of SPAD to optimize the design.
Keywords
CMOS integrated circuits; Integrated circuit modeling; Light sources; Mathematical model; Noise; Photonics; Radiation detectors; CMOS SPAD; Dark Count; MATLAB Model; Poisson law process; analog counter;
fLanguage
English
Publisher
ieee
Conference_Titel
Ph.D. Research in Microelectronics and Electronics (PRIME), 2015 11th Conference on
Conference_Location
Glasgow, United Kingdom
Type
conf
DOI
10.1109/PRIME.2015.7251350
Filename
7251350
Link To Document