Title :
Characterisation and modelling of Mg doped ZnO TFTs
Author :
Shaw, A. ; Gao, C. ; Jin, J.D. ; Mitrovic, I.Z. ; Hall, S.
Author_Institution :
Department of Electrical and Electronic Engineering, University of Liverpool, Liverpool, UK
fDate :
June 29 2015-July 2 2015
Abstract :
The ever-increasing use of ZnO TFTs requires further in depth analysis and the need for a suitable model to obtain the true transport mechanisms. This paper explores the modelling of MgZnO TFTs using a defect state model based on multiple trapping and release and successfully validates the model with the fitting parameters. Namely, flat band voltage, characteristic temperature associated with the defect distribution, number of traps and conductivity of the ZnO film.
Keywords :
Films; Fitting; II-VI semiconductor materials; Mathematical model; Photonic band gap; Thin film transistors; Zinc oxide; Magnesium doped Zinc Oxide (MgZnO); TFT modelling; Zinc oxide (ZnO); atomic layered deposition (ALD); thin film transistor (TFT);
Conference_Titel :
Ph.D. Research in Microelectronics and Electronics (PRIME), 2015 11th Conference on
Conference_Location :
Glasgow, United Kingdom
DOI :
10.1109/PRIME.2015.7251357
