DocumentCode
2178588
Title
Characterisation and modelling of Mg doped ZnO TFTs
Author
Shaw, A. ; Gao, C. ; Jin, J.D. ; Mitrovic, I.Z. ; Hall, S.
Author_Institution
Department of Electrical and Electronic Engineering, University of Liverpool, Liverpool, UK
fYear
2015
fDate
June 29 2015-July 2 2015
Firstpage
153
Lastpage
156
Abstract
The ever-increasing use of ZnO TFTs requires further in depth analysis and the need for a suitable model to obtain the true transport mechanisms. This paper explores the modelling of MgZnO TFTs using a defect state model based on multiple trapping and release and successfully validates the model with the fitting parameters. Namely, flat band voltage, characteristic temperature associated with the defect distribution, number of traps and conductivity of the ZnO film.
Keywords
Films; Fitting; II-VI semiconductor materials; Mathematical model; Photonic band gap; Thin film transistors; Zinc oxide; Magnesium doped Zinc Oxide (MgZnO); TFT modelling; Zinc oxide (ZnO); atomic layered deposition (ALD); thin film transistor (TFT);
fLanguage
English
Publisher
ieee
Conference_Titel
Ph.D. Research in Microelectronics and Electronics (PRIME), 2015 11th Conference on
Conference_Location
Glasgow, United Kingdom
Type
conf
DOI
10.1109/PRIME.2015.7251357
Filename
7251357
Link To Document