• DocumentCode
    2178667
  • Title

    Hot carrier injection effect on threshold voltage of NMOSFETs

  • Author

    Lahbib, Insaf ; Doukkali, Aziz ; Martin, Patrick ; Imbert, Guy ; Raoulx, Denis

  • Author_Institution
    Normandie Université ENSICAEN/ CRISMAT/UMR 6508, 6 boulevard Maréchal Juin, 14050 Caen cedex 04, France
  • fYear
    2015
  • fDate
    June 29 2015-July 2 2015
  • Firstpage
    164
  • Lastpage
    167
  • Abstract
    In this paper, Hot Carrier (HC) injection mechanism effect on NMOSFETs´ Threshold Voltage (VTh) is examined. The purpose of this work is to predict VTh degradation, under DC hot carrier stress conditions, of NMOS transistors for different channel lengths and widths, using a simulation reliability tool owned by NXP semiconductors and validate simulation results with HC degradation model. VTh extraction is conducted using Constant Current (CC) threshold voltage method.
  • Keywords
    Aging; Degradation; Hot carriers; Reliability; Stress; Threshold voltage; Transistors; aging time; hot carrier degradation; reliability simulation; threshold voltage extraction; threshold voltage shift;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Ph.D. Research in Microelectronics and Electronics (PRIME), 2015 11th Conference on
  • Conference_Location
    Glasgow, United Kingdom
  • Type

    conf

  • DOI
    10.1109/PRIME.2015.7251360
  • Filename
    7251360
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2178667