Title :
A rad-hard, low-noise, high-speed, BiFET charge preamplifier for the Superconducting Supercollider
Author :
Ling, K.Y. ; VanPeteghem, P.M. ; Lee, S.Y. ; Liu, H.H. ; DiBitonto, D.
Author_Institution :
Dept. of Electr. Eng., Texas A&M Univ., College Station, TX, USA
Abstract :
An integrated low-noise, radiation-hard, high-speed charge preamplifier prototype, designed for a 10-pF detector cell for warm liquid calorimetry experiments, is presented. An industrial junction-isolated BiFET process, with an 80-MHz fT for the p-JFETs and 260-MHz fT for the n-p-n transistors, was selected to minimize noise level, as necessitated by such a low detector capacitance. Results of performance tests for total radiation doses of up to 1.4-Mrad gamma rays and 2×1013 neutrons/cm2 are presented
Keywords :
junction gate field effect transistors; linear integrated circuits; monolithic integrated circuits; nuclear electronics; preamplifiers; radiation hardening (electronics); 1.4×106 rad; 10 pF; 260 MHz; 80 MHz; BiFET charge preamplifier; Superconducting Supercollider; detector cell; high-speed; junction-isolated BiFET process; low detector capacitance; low-noise; monolithic LNA; radiation-hard; total radiation doses; warm liquid calorimetry experiments; Calorimetry; Capacitance; Gamma rays; Neutrons; Noise level; Preamplifiers; Prototypes; Radiation detectors; Radiation hardening; Testing;
Conference_Titel :
Bipolar Circuits and Technology Meeting, 1989., Proceedings of the 1989
Conference_Location :
Minneapolis, MN
DOI :
10.1109/BIPOL.1989.69473
