Parametric synthesis of microwave FET oscillators

Author

Bochkov, Viatcheslav V. ; Dubrovsky, Vladimir N. ; Karasev, Aleksandr S.

Author_Institution

St. Petersburg State Tech. Univ., Russia

fYear

2002

fDate

2002

Firstpage

374

Lastpage

377

Abstract

A nonlinear FET model, including approximating voltage dependencies of drain current, gate-source capacitance and resistance is considered. The technique based on the harmonic balance for the calculation of stationary oscillation is described. A new parametric synthesis method of microwave oscillator with "star-like" structure is proposed. This method enables us to get automatically the necessary frequency and power. The PC program for the design of integrated microwave FET oscillators is described.

Keywords

MMIC oscillators; capacitance; circuit simulation; field effect MMIC; harmonic oscillators (circuits); network parameters; PC program; approximating voltage dependencies; drain current; gate-source capacitance; harmonic balance; integrated microwave FET oscillators; microwave oscillator; parametric synthesis; resistance; star-like structure; stationary oscillation; Capacitance; Circuit synthesis; Equivalent circuits; Integrated circuit synthesis; Microwave FETs; Microwave devices; Microwave oscillators; Microwave theory and techniques; Voltage; Voltage-controlled oscillators;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems for Communications, 2002. Proceedings. ICCSC '02. 1st IEEE International Conference on

Print_ISBN

5-7422-0260-1

Type

conf

DOI

10.1109/OCCSC.2002.1029119

Filename

1029119