Low-loss high power microwave switching using novel nitride based MOS heterostructure field-effect transistors

Author

Simin, G. ; Koudymov, A. ; Hu, X. ; Zhang, J. ; Ali, M. ; Khan, M.

Author_Institution

Dept. of Electr. Eng., South Carolina Univ., Columbia, SC, USA

fYear

2002

fDate

2002

Firstpage

390

Lastpage

391

Abstract

A microwave switch based on a novel nitride based metal-oxide-semiconductor heterostructure field effect transistor (MOSHFET) is proposed and demonstrated. Due to record high saturation current and breakdown voltage, negligible gate leakage current and low gate capacitance, the proposed switch allows for less than 0.3 dB insertion loss and more than 35 dB isolation. The unique feature of the MOSHFET based switch is the maximum switching power, in excess of 80 W for a 1 mm wide active element.

Keywords

III-V semiconductors; MOSFET; aluminium compounds; dielectric thin films; gallium compounds; leakage currents; losses; microwave field effect transistors; microwave switches; semiconductor device breakdown; semiconductor heterojunctions; wide band gap semiconductors; 0.3 dB; 1 mm; 80 W; AlGaN-GaN; AlGaN/GaN MOSHFET; MOSHFET based switch; active element; breakdown voltage; gate capacitance; gate leakage current; low-loss high power microwave switching; maximum switching power; microwave switch; nitride based MOS heterostructure field-effect transistors; saturation current; switch insertion loss; switch isolation; Capacitance; Frequency; Gallium nitride; HEMTs; Insertion loss; Leakage current; MODFETs; MOSHFETs; Microwave devices; Power semiconductor switches;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems for Communications, 2002. Proceedings. ICCSC '02. 1st IEEE International Conference on

Print_ISBN

5-7422-0260-1

Type

conf

DOI

10.1109/OCCSC.2002.1029123

Filename

1029123