DocumentCode
2179691
Title
A study of polar codes for MLC NAND flash memories
Author
Yue Li ; Alhussien, Hakim ; Haratsch, Erich F. ; Jiang, Anxiao Andrew
Author_Institution
Texas A&M Univ., College Station, TX, USA
fYear
2015
fDate
16-19 Feb. 2015
Firstpage
608
Lastpage
612
Abstract
The increasing density of NAND flash memories makes data more prone to errors due to severe process variations and disturbance. The urgency to improve NAND flash reliability encourages searching for optimal channel coding methods. This paper reports our efforts towards a read channel for flash memories using polar coding. Our contributions include the solutions to several challenges raised when applying polar codes to NAND flash memories in practice. We propose efficient schemes for shortening both non-systematic and systematic polar codes, making polar codewords be easily adapted to flash page of any size. We demonstrate that the decoding performance of the shortened polar codes and LDPC codes are comparable using the data obtained by our NAND flash characterization platform. We show the feasibility of a practical adaptive decoding framework where it is not necessary to construct new polar codes for different channel parameters. Experimental results show that the decoding performance approaches the optimized performance where different codes are constructed for different channel conditions. To the best of our knowledge, this work is the first study of polar codes for error correction in flash memories.
Keywords
NAND circuits; error correction codes; flash memories; MLC NAND flash memories; error correction; polar codes; read channel; Ash; Decoding; Encoding; Error analysis; Noise measurement; Sensors; Threshold voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Computing, Networking and Communications (ICNC), 2015 International Conference on
Conference_Location
Garden Grove, CA
Type
conf
DOI
10.1109/ICCNC.2015.7069414
Filename
7069414
Link To Document