Energy-band parameter of atomic layer deposited Al2O3 & sulphur passivated molecular beam epitaxially grown (110) In0.53Ga0.47As surfaces

Based on sulphur passivation (10% (NH4)2S, 20min), the interface of MOS capacitors between atomic-layer-deposited Al2O3 and (110)-oriented p-type In0.53Ga0.47As layers indicate the capability of Fermi level movement and minority carrier inversion. Cox has effectively extracted by Gm/ω & − ωdC/dω. Forming gas annealing (N2:H2 5%:95% at 350°C, 30min) improves minority carrier response and the interface trap density around the midgap estimated to be 4.4×10¹²(1.6×10¹²) cm⁻² eV⁻¹ before (and after) FGA. Moreover, Fowler-Nordheim (FN) tunneling current provides the conduction band offset at the surface between Al2O3 and In0.53Ga0.47As (110)-oriented layer is ∼1.81eV and the barrier height is estimated to be the same after FGA. Finally, the band parameter of Al2O3 and In0.53Ga0.47As (110)-oriented layer has been firstly reported