• DocumentCode
    2180154
  • Title

    Effects of Nb concentration on photo-electrical properties of Sr1-xLaxNbyTi1-yO3 thin-film resistor

  • Author

    Bin Li ; Lai, P.T. ; Huang, M.Q. ; Li, Bin

  • Author_Institution
    Dept. of Appl. Phys., South China Univ. of Technol., Guangzhou, China
  • fYear
    2002
  • fDate
    2002
  • Firstpage
    21
  • Lastpage
    25
  • Abstract
    Strontium lanthanum titanate-niobate (SrLaNbxTi1-xO3) thin-film resistors are fabricated on SiO2/Si substrates by an argon ion-beam sputtering technique. Measurements show that the thin-film resistor has superior sensitivity for visible light. Moreover, the effects of Nb concentration on the photo-electrical properties of Sr1-xLaxNbyTi1-yO3 thin-film resistors and frequency effects on the photosensitivity performance are extensively investigated.
  • Keywords
    ion beam assisted deposition; lanthanum compounds; photodetectors; semiconductor device measurement; semiconductor materials; sputter deposition; strontium compounds; thin film resistors; Ar; Nb concentration effects; SiO2-Si; SiO2/Si substrate; Sr1-xLaxNbyTi1-yO3 thin-film resistor; SrLaNbTiO3-SiO2-Si; argon ion-beam sputtering technique; photo-electrical properties; photosensitivity performance; resistor measurements; semiconducting perovskite oxide thin films; strontium lanthanum titanate-niobate thin-film resistor; visible light sensitivity; Argon; Lanthanum; Niobium; Resistors; Semiconductor thin films; Sputtering; Strontium; Substrates; Titanium compounds; Transistors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 2002. Proceedings. 2002 IEEE Hong Kong
  • Print_ISBN
    0-7803-7429-0
  • Type

    conf

  • DOI
    10.1109/HKEDM.2002.1029148
  • Filename
    1029148
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2180154