Title :
Electrical characteristics of stressing for silicon oxynitride thin film
Author :
Chan, P.J. ; Poon, M.C. ; Wong, H. ; Kok, C.W.
Author_Institution :
Dept. of Electr. & Electron. Eng., Hong Kong Univ. of Sci. & Technol., China
Abstract :
Capacitors using thin oxynitride films as dielectric layer were fabricated. I-V measurements and constant current stressing to the samples of oxynitride capacitors were done. C-V measurements to the samples were also carried out. By applying constant current stressing to the samples, characteristics of oxynitride samples after stressing could be observed. The stressing current to the samples could be thought as continuous usage current to a non-volatile memory device. The results in this paper revealed the effect of the charge trapping of a non-volatile memory device.
Keywords :
MOS capacitors; capacitance; dielectric thin films; electric current; integrated circuit testing; integrated memory circuits; random-access storage; silicon compounds; C-V; I-V measurements; MOS capacitors; SiON-Si; charge trapping effect; constant current stressing; continuous usage current; dielectric layer; electrical characteristics; nonvolatile memory device; oxynitride capacitors; silicon oxynitride thin film; Capacitors; Current measurement; Dielectric films; Dielectric measurements; Dielectric thin films; Electric variables; Nonvolatile memory; Semiconductor thin films; Silicon; Stress measurement;
Conference_Titel :
Electron Devices Meeting, 2002. Proceedings. 2002 IEEE Hong Kong
Print_ISBN :
0-7803-7429-0
DOI :
10.1109/HKEDM.2002.1029154
