Electrical characteristics of stressing for silicon oxynitride thin film

Author

Chan, P.J. ; Poon, M.C. ; Wong, H. ; Kok, C.W.

Author_Institution

Dept. of Electr. & Electron. Eng., Hong Kong Univ. of Sci. & Technol., China

fYear

2002

fDate

2002

Firstpage

47

Lastpage

50

Abstract

Capacitors using thin oxynitride films as dielectric layer were fabricated. I-V measurements and constant current stressing to the samples of oxynitride capacitors were done. C-V measurements to the samples were also carried out. By applying constant current stressing to the samples, characteristics of oxynitride samples after stressing could be observed. The stressing current to the samples could be thought as continuous usage current to a non-volatile memory device. The results in this paper revealed the effect of the charge trapping of a non-volatile memory device.

Keywords

MOS capacitors; capacitance; dielectric thin films; electric current; integrated circuit testing; integrated memory circuits; random-access storage; silicon compounds; C-V; I-V measurements; MOS capacitors; SiON-Si; charge trapping effect; constant current stressing; continuous usage current; dielectric layer; electrical characteristics; nonvolatile memory device; oxynitride capacitors; silicon oxynitride thin film; Capacitors; Current measurement; Dielectric films; Dielectric measurements; Dielectric thin films; Electric variables; Nonvolatile memory; Semiconductor thin films; Silicon; Stress measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2002. Proceedings. 2002 IEEE Hong Kong

Print_ISBN

0-7803-7429-0

Type

conf

DOI

10.1109/HKEDM.2002.1029154

Filename

1029154