• DocumentCode
    2180378
  • Title

    Application of shape memory alloy as detector material for far-infrared imaging transducers

  • Author

    Ho, H.P. ; Chung, C.Y. ; Ng, K.C. ; Cheng, K.L. ; Wu, S.Y.

  • Author_Institution
    Dept. of Phys. & Mater. Sci., City Univ. of Hong Kong, Kowloon, China
  • fYear
    2002
  • fDate
    2002
  • Firstpage
    59
  • Lastpage
    61
  • Abstract
    Based on the thermo-mechanical deformation property of shape memory alloys (SMAs), a nickel-titanium shape memory alloy (NiTi SMA) is used to construct an infrared imaging device. The NiTi SMA device is in the form of a thin film cantilever pixel. The absorption of energy from the impinging infrared radiation changes the horizontal tilt of the pixel due to the reverse martensitic transformation of NiTi SMA. The tilt angle change can be detected by illuminating the cantilever using a laser beam. One can therefore generate an IR image by monitoring the optical reflection from the thin film cantilever pixel. The possibility of realizing a practical low-cost infrared imaging device operating under room temperature conditions is envisaged.
  • Keywords
    Michelson interferometers; angular measurement; infrared detectors; infrared imaging; light reflection; martensitic transformations; metallic thin films; nickel alloys; shape memory effects; titanium alloys; 20 degC; IR energy absorption; Michelson interferometer; Ni-Ti; SMA detector material; angular deflection; infrared imaging device; laser beam cantilever illumination; nickel-titanium shape memory alloy; optical reflection; pixel horizontal tilt; reverse martensitic transformation; room temperature operation; thermo-mechanical deformation; thin film cantilever pixel; tilt angle change detection; uncooled Ni-Ti SMA far-infrared imaging transducer; Detectors; Electromagnetic wave absorption; Infrared imaging; Laser beams; Laser transitions; Optical imaging; Shape memory alloys; Thermomechanical processes; Thin film devices; Transducers;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 2002. Proceedings. 2002 IEEE Hong Kong
  • Print_ISBN
    0-7803-7429-0
  • Type

    conf

  • DOI
    10.1109/HKEDM.2002.1029157
  • Filename
    1029157