Title :
High-temperature quasi-saturation model of high-voltage DMOS power devices
Author :
Yang, C.L. ; Kuo, J.B.
Author_Institution :
Dept. of Electr. & Comput. Eng., Waterloo Univ., Ont., Canada
Abstract :
This paper reports the analysis of the high-temperature (300 K-400 K) quasi-saturation behavior of high-voltage DMOS devices using a closed-form quasi-saturation model. Based on the analytical model, at the higher temperature, the quasi-saturation behavior occurs at a smaller gate voltage due to the smaller saturated velocity as verified by the MEDICI results.
Keywords :
high-temperature electronics; power MOSFET; semiconductor device models; 300 to 400 K; MEDICI simulation; analytical model; high-temperature quasi-saturation model; high-voltage DMOS power device; Analytical models; Electrons; Medical simulation; Region 2; Region 3; Telephony; Temperature dependence; Temperature distribution; Threshold voltage;
Conference_Titel :
Electron Devices Meeting, 2002. Proceedings. 2002 IEEE Hong Kong
Print_ISBN :
0-7803-7429-0
DOI :
10.1109/HKEDM.2002.1029162
