DocumentCode :
2180641
Title :
A 44 GHz InP-based HBT double-balanced amplifier with novel current re-use biasing
Author :
Kobayashi, K.W. ; Nishimoto, M. ; Tran, L.T. ; Wang, H. ; Cowles, J. ; Block, T.R. ; Elliott, J. ; Allen, B. ; Oki, A.K. ; Streit, D.C.
Author_Institution :
TRW Electron. & Technol. Div., Redondo Beach, CA, USA
fYear :
1998
fDate :
11-8 June 1998
Firstpage :
267
Lastpage :
270
Abstract :
Here we report on what is believed to be the first Q-band IP3 results of an InAlAs-InGaAs-InP based HBT MMIC linear amplifier. The 3-stage amplifier uniquely combines a "double-balanced" design topology that incorporates a "current re-use" bias scheme. The amplifier MMIC achieves 15.4 dB of gain, 28.3 dBm of IP3, and a P/sub sat/ of 16.2 dBm at 44 GHz. The corresponding output-stage IP3/P/sub dc/ ratio is 5.3 which is the best reported for InP-HBTs at Q-band. The MMIC is a high complexity chip which integrates 15 HBTs and 18 Lange couplers in a 6.2/spl times/3.5 mm/sup 2/ area, and is self-biased through 5 V while consuming 108 mA. The "current re-use" enables easier system integration while the "double-balanced" design produces wideband IP3, gain and return-loss performance. This work demonstrates the promising linearity performance of InP-HBTs and practical biasing capability which is attractive for Q-band receiver applications such as MM-wave digital radio.
Keywords :
III-V semiconductors; MMIC amplifiers; bipolar MIMIC; heterojunction bipolar transistors; indium compounds; millimetre wave amplifiers; 108 mA; 15.4 dB; 3-stage amplifier; 44 GHz; 5 V; EHF; HBT MMIC linear amplifier; InAlAs-InGaAs-InP; InP-based HBT; Lange couplers; MM-wave digital radio; Q-band MIMIC; Q-band receiver applications; current re-use biasing; double-balanced amplifier; linearity performance; wideband IP3; Digital communication; Frequency; Heterojunction bipolar transistors; Indium gallium arsenide; Linearity; MMICs; Performance gain; Pulse amplifiers; Receivers; Space technology;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Radio Frequency Integrated Circuits (RFIC) Symposium, 1998 IEEE
Conference_Location :
Baltimore, MD, USA
ISSN :
1097-2633
Print_ISBN :
0-7803-4439-1
Type :
conf
DOI :
10.1109/RFIC.1998.682095
Filename :
682095
Link To Document :
بازگشت