• DocumentCode
    2181635
  • Title

    A GaAs HBT ultra-linear video amplifier gain cell

  • Author

    Siu, Elton W. ; Wiggins, Rick H. ; Oki, Aaron K. ; Kim, Michael E.

  • Author_Institution
    TRW, Redondo Beach, CA, USA
  • fYear
    1989
  • fDate
    18-19 Sep 1989
  • Firstpage
    128
  • Lastpage
    130
  • Abstract
    A GaAs heterojunction bipolar transistor (HBT) ultralinear video amplifier gain cell fabricated in a 3-μm technology is discussed. The circuit design and fabrication are described. The gain cell was fabricated in a relaxed, 3-μm, self-aligned-base, ohmic-metal process using molecular beam epitaxy. Wafer probe test data demonstrate harmonic distortion <-80 dBc with 10 MHz sinusoid, with Vpp of 4 V delivered into a 400-Ω load dissipating 2.0 W
  • Keywords
    III-V semiconductors; bipolar integrated circuits; gallium arsenide; heterojunction bipolar transistors; linear integrated circuits; molecular beam epitaxial growth; video amplifiers; 3 micron; GaAs; HBT; MBE; circuit design; fabrication; heterojunction bipolar transistor; molecular beam epitaxy; ohmic-metal process; self-aligned-base; ultralinear gain cell; video amplifier; Bandwidth; Broadband amplifiers; Frequency; Gallium arsenide; Harmonic distortion; Heterojunction bipolar transistors; Performance gain; Probes; Space technology; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Bipolar Circuits and Technology Meeting, 1989., Proceedings of the 1989
  • Conference_Location
    Minneapolis, MN
  • Type

    conf

  • DOI
    10.1109/BIPOL.1989.69474
  • Filename
    69474
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2181635