• DocumentCode
    2182051
  • Title

    Design and fabrication of a TSV interposer for SRAM integration

  • Author

    Zhu, Yunhui ; Ma, Shenglin ; Cui, Qinghu ; Kang, Wenping ; Zhu, Zhiyuan ; Sun, Xin ; Wang, Guanjiang ; Zhang, Mengmeng ; Chen, Jing ; Miao, Min ; Jin, Yufeng

  • Author_Institution
    Nat. Key Lab. of Sci. & Technol. on Micro/Nano Fabrication, Peking Univ., Beijing, China
  • fYear
    2011
  • fDate
    8-11 Aug. 2011
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    TSV interposer provides a cost efficient solution way for 3D IC integration. In this paper, a TSV interposer technology is proposed for SRAM stacking. A simple fabrication process is developed for cost-sensitive application. The mushroomlike Cu/Sn bumps by copper overburden can be directly connected with other substrate, which eliminates a CMP planarization to improve the yield and reduce fabrication cost. The electrical and thermal-mechanical behaviors of the 3D system were analyzed. Preliminary fabrication results are demonstrated. The TSV interposer technology is promising for 3D SRAM integration.
  • Keywords
    SRAM chips; chemical mechanical polishing; copper; integrated circuit yield; three-dimensional integrated circuits; Cu-Sn; Copper; Fabrication; Layout; Packaging; Random access memory; Three dimensional displays; Through-silicon vias;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electronic Packaging Technology and High Density Packaging (ICEPT-HDP), 2011 12th International Conference on
  • Conference_Location
    Shanghai
  • Print_ISBN
    978-1-4577-1770-3
  • Electronic_ISBN
    978-1-4577-1768-0
  • Type

    conf

  • DOI
    10.1109/ICEPT.2011.6066784
  • Filename
    6066784