DocumentCode
2182051
Title
Design and fabrication of a TSV interposer for SRAM integration
Author
Zhu, Yunhui ; Ma, Shenglin ; Cui, Qinghu ; Kang, Wenping ; Zhu, Zhiyuan ; Sun, Xin ; Wang, Guanjiang ; Zhang, Mengmeng ; Chen, Jing ; Miao, Min ; Jin, Yufeng
Author_Institution
Nat. Key Lab. of Sci. & Technol. on Micro/Nano Fabrication, Peking Univ., Beijing, China
fYear
2011
fDate
8-11 Aug. 2011
Firstpage
1
Lastpage
4
Abstract
TSV interposer provides a cost efficient solution way for 3D IC integration. In this paper, a TSV interposer technology is proposed for SRAM stacking. A simple fabrication process is developed for cost-sensitive application. The mushroomlike Cu/Sn bumps by copper overburden can be directly connected with other substrate, which eliminates a CMP planarization to improve the yield and reduce fabrication cost. The electrical and thermal-mechanical behaviors of the 3D system were analyzed. Preliminary fabrication results are demonstrated. The TSV interposer technology is promising for 3D SRAM integration.
Keywords
SRAM chips; chemical mechanical polishing; copper; integrated circuit yield; three-dimensional integrated circuits; Cu-Sn; Copper; Fabrication; Layout; Packaging; Random access memory; Three dimensional displays; Through-silicon vias;
fLanguage
English
Publisher
ieee
Conference_Titel
Electronic Packaging Technology and High Density Packaging (ICEPT-HDP), 2011 12th International Conference on
Conference_Location
Shanghai
Print_ISBN
978-1-4577-1770-3
Electronic_ISBN
978-1-4577-1768-0
Type
conf
DOI
10.1109/ICEPT.2011.6066784
Filename
6066784
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