Title :
IWCE 2009 - Title page
Abstract :
The following topics are dealt with: semiconductor technology; Si PMOS; nanowire MOS transistors; AlGaN/GaN HEMT; finite element method; ballistic nanowire MOSFET; quantum transport model; Monte Carlo method; quantum dot devices; boron-doped graphene FET; and graphene nanoribbon resonant tunneling diodes.
Keywords :
MOSFET; Monte Carlo methods; aluminium compounds; boron; elemental semiconductors; finite element analysis; molecular electronics; silicon; AlGaN-GaN; B; C; Monte Carlo method; Si; Si PMOS; ballistic nanowire MOSFET; boron-doped graphene FET; finite element method; graphene nanoribbon resonant tunneling diodes; nanowire MOS transistors; quantum dot devices; quantum transport model; semiconductor technology;
Conference_Titel :
Computational Electronics, 2009. IWCE '09. 13th International Workshop on
Conference_Location :
Beijing
Print_ISBN :
978-1-4244-3925-6
DOI :
10.1109/IWCE.2009.5091071
