Proposal of up-to-date standards on methods of measuring noise in linear two-ports

Author

Martines, G. ; Sannino, M.

Author_Institution

Dipartimento di Ingegneria Elettrica, Palermo Univ., Italy

fYear

1994

fDate

June 27 1994-July 1 1994

Firstpage

482

Lastpage

483

Abstract

One of the most interesting topics for microwave community is the characterization of low-noise transistors. After so many years, the standards suggested by IEEE in 1960 are considered obsolete by the experimenters. A new methodology is proposed here as a standard. To support this proposal, an original measuring system for the complete characterization of microwave transistors in terms of noise, gain and scattering parameters from noise figure measurements only is presented.<>

Keywords

S-parameters; electric noise measurement; gain measurement; measurement standards; multiport networks; semiconductor device models; semiconductor device noise; solid-state microwave devices; IEEE; gain; linear two-ports; low-noise transistors; measurement standards; noise figure measurements; noise measurement; scattering parameters; standards; Data processing; Gain measurement; Measurement standards; Microwave measurements; Microwave transistors; Noise figure; Noise measurement; Proposals; Scattering parameters; Tuners;

fLanguage

English

Publisher

ieee

Conference_Titel

Precision Electromagnetic Measurements, 1994. Digest., 1994 Conference on

Conference_Location

Boulder, CO, USA

Print_ISBN

0-7803-1984-2

Type

conf

DOI

10.1109/CPEM.1994.333208

Filename

333208