A Discontinuous Galerkin Solver for Full-Band Boltzmann-Poisson Models

Author

Cheng, Yingda ; Gamba, Irene M. ; Majorana, Armando ; Shu, Chi-Wang

Author_Institution

Dept. of Math. & ICES, Univ. of Texas at Austin, Austin, TX

fYear

2009

fDate

27-29 May 2009

Firstpage

1

Lastpage

4

Abstract

We present new preliminary results of a discontinuous Galerkin (DG) scheme applied to deterministic computations of the transients for the Boltzmann-Poisson (BP) system describing electron transport in semiconductor devices. Very recently in, results for one and two dimensional devices were obtained in the case of silicon semiconductor assuming the non-parabolic band approximation. Here, more general band structures are considered. Preliminary benchmark numerical tests on Kane and Brunetti et al. band models are reported.

Keywords

Boltzmann equation; Galerkin method; Poisson equation; elemental semiconductors; semiconductor devices; silicon; deterministic computations; discontinuous Galerkin solver; electron transport; full-band Boltzmann-Poisson models; nonparabolic band approximation; semiconductor devices; silicon semiconductor; Acoustic scattering; Computational modeling; Electrons; Ice; Lattices; Mathematical model; Mathematics; Neodymium; Optical scattering; Probability density function;

fLanguage

English

Publisher

ieee

Conference_Titel

Computational Electronics, 2009. IWCE '09. 13th International Workshop on

Conference_Location

Beijing

Print_ISBN

978-1-4244-3925-6

Electronic_ISBN

978-1-4244-3927-0

Type

conf

DOI

10.1109/IWCE.2009.5091079

Filename

5091079