DocumentCode
2182540
Title
Fabrication and in-situ evaluation of copper TSV interconnection
Author
Ma, Shenglin ; Zhu, Yunhui ; Sun, Xin ; Miao, Min ; Chen, Jin ; Jin, Yufeng
Author_Institution
Nat. Key Lab. on Micro/Nano Fabrication Technol., Peking Univ., Beijing, China
fYear
2011
fDate
8-11 Aug. 2011
Firstpage
1
Lastpage
4
Abstract
In this paper, a process for making copper Though-Silicon-Via (TSV) interconnection is developed. In order to improve the yield of the process, challenging issues in the process is discussed and typical failures in the TSV interconnection are summarized. A measuring scheme is proposed to monitor these failures in the process and simulation is performed to testify the feasibility of the method.
Keywords
copper; integrated circuit interconnections; integrated circuit yield; TSV failures; copper TSV interconnection; integrated circuit yield; though silicon via; Copper; Fabrication; Filling; Resistance; Through-silicon vias; Tin;
fLanguage
English
Publisher
ieee
Conference_Titel
Electronic Packaging Technology and High Density Packaging (ICEPT-HDP), 2011 12th International Conference on
Conference_Location
Shanghai
Print_ISBN
978-1-4577-1770-3
Electronic_ISBN
978-1-4577-1768-0
Type
conf
DOI
10.1109/ICEPT.2011.6066801
Filename
6066801
Link To Document