Characterization of the InGaAs detector to be used as a radiometric transfer etalon

Large area InGaAs detectors are characterized by spectral sensitivity, spatial uniformity and shunt resistance, in order to determine their abilities to be used as transfer etalons in place of germanium detectors for power measurements in fiber optics field. The paper shows the initial measurements on a 5 mm-diameter InGaAs detector prior to an ageing process which will be monitored with a six months measurement cycling period. The measurements show a kink in the spectral sensitivity curve at 1650 nm, far away from the 1550 nm region, a good spatial uniformity at 850 nm, 1300 nm and 1550 nm, and a shunt resistance of 35 k/spl Omega/ at room temperature.<>