Title :
Bias Induced Strain Effects, Short-Range Electron - Electron Interactions and Quantum Effects in AlGaN/GaN HEMTs
Author :
Ashok, Ashwin ; Vasileska, Dragica ; Goodnick, Stephen M. ; Hartin, Olin
Author_Institution :
Dept. of Electr. Eng., Arizona State Univ., Tempe, AZ
Abstract :
In this paper we present state of the art modeling of GaN HEMTs, which includes for the first time simultaneous consideration of the electromechanical coupling, short-range Coulomb and quantum mechanical size quantization effects.
Keywords :
aluminium compounds; electromagnetic coupling; electron-electron interactions; gallium compounds; high electron mobility transistors; wide band gap semiconductors; AlGaN-GaN; HEMT; bias induced strain effects; electromechanical coupling; quantization effects; quantum effects; quantum mechanical size; short-range Coulomb; short-range electron-electron interactions; Aluminum gallium nitride; Capacitive sensors; Charge carrier processes; Electrons; Equations; Gallium nitride; HEMTs; MODFETs; Piezoelectric polarization; Tensile stress;
Conference_Titel :
Computational Electronics, 2009. IWCE '09. 13th International Workshop on
Conference_Location :
Beijing
Print_ISBN :
978-1-4244-3925-6
Electronic_ISBN :
978-1-4244-3927-0
DOI :
10.1109/IWCE.2009.5091087
