DocumentCode
2182711
Title
Bias Induced Strain Effects, Short-Range Electron - Electron Interactions and Quantum Effects in AlGaN/GaN HEMTs
Author
Ashok, Ashwin ; Vasileska, Dragica ; Goodnick, Stephen M. ; Hartin, Olin
Author_Institution
Dept. of Electr. Eng., Arizona State Univ., Tempe, AZ
fYear
2009
fDate
27-29 May 2009
Firstpage
1
Lastpage
4
Abstract
In this paper we present state of the art modeling of GaN HEMTs, which includes for the first time simultaneous consideration of the electromechanical coupling, short-range Coulomb and quantum mechanical size quantization effects.
Keywords
aluminium compounds; electromagnetic coupling; electron-electron interactions; gallium compounds; high electron mobility transistors; wide band gap semiconductors; AlGaN-GaN; HEMT; bias induced strain effects; electromechanical coupling; quantization effects; quantum effects; quantum mechanical size; short-range Coulomb; short-range electron-electron interactions; Aluminum gallium nitride; Capacitive sensors; Charge carrier processes; Electrons; Equations; Gallium nitride; HEMTs; MODFETs; Piezoelectric polarization; Tensile stress;
fLanguage
English
Publisher
ieee
Conference_Titel
Computational Electronics, 2009. IWCE '09. 13th International Workshop on
Conference_Location
Beijing
Print_ISBN
978-1-4244-3925-6
Electronic_ISBN
978-1-4244-3927-0
Type
conf
DOI
10.1109/IWCE.2009.5091087
Filename
5091087
Link To Document