DocumentCode
2182731
Title
Boundary Conditions for Incoherent Quantum Transport
Author
Frey, Martin ; Esposito, Aniello ; Schenk, Andreas
Author_Institution
Integrated Syst. Lab., ETH Zurich, Zurich
fYear
2009
fDate
27-29 May 2009
Firstpage
1
Lastpage
4
Abstract
In this paper, the influence of coherent and incoherent boundary conditions for quantum transport through silicon nanowires is studied. An iteration scheme to compute an approximate self-energy in the contacts is proposed. The focus lies on the impact on the self-consistent electrostatics and the current computation. In addition, the scaling behavior with increasing device lengths is shown.
Keywords
charge injection; electrostatics; elemental semiconductors; iterative methods; nanowires; phonons; silicon; Si; boundary conditions; carrier injection; carrier-phonon scattering; incoherent quantum transport; iteration scheme; scaling behavior; self-consistent electrostatics; silicon nanowires; Boundary conditions; Charge carrier processes; Electrostatics; Green´s function methods; Laboratories; Nanoscale devices; Nanowires; Particle scattering; Poisson equations; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Computational Electronics, 2009. IWCE '09. 13th International Workshop on
Conference_Location
Beijing
Print_ISBN
978-1-4244-3925-6
Electronic_ISBN
978-1-4244-3927-0
Type
conf
DOI
10.1109/IWCE.2009.5091088
Filename
5091088
Link To Document