Title :
Computational Study of Graphene Nanoribbon Resonant Tunneling Diodes
Author :
Liang, Gengchiau ; Teong, Hansen ; Lam, Kai-Tak
Author_Institution :
Dept. of Electr. & Comput. Eng., Nat. Univ. of Singapore, Singapore
Abstract :
The structural effects of different graphene nanoribbon resonant tunneling diodes (GNR-RTDs) are investigated under different temperatures. Although the W-shape structure outperforms the H-shape structure in term of the peak current, the peak-to-valley ratio of the H-shape is higher than the W-shape due to the smaller peak currents of the former. Furthermore, the effects of the channel length and the contact´s bandgap of the W-shape GNR RTDs on device performance are studied and their detailed device physics is also provided in this work.
Keywords :
graphene; resonant tunnelling diodes; H-shape structure; W-shape structure; channel length; graphene nanoribbon resonant tunneling diodes; Circuit synthesis; Diodes; HEMTs; Logic circuits; MODFETs; Photonic band gap; Physics; Resonant tunneling devices; Shape; Temperature;
Conference_Titel :
Computational Electronics, 2009. IWCE '09. 13th International Workshop on
Conference_Location :
Beijing
Print_ISBN :
978-1-4244-3925-6
Electronic_ISBN :
978-1-4244-3927-0
DOI :
10.1109/IWCE.2009.5091097
