DocumentCode
2182997
Title
Computational Study of Graphene Nanoribbon Resonant Tunneling Diodes
Author
Liang, Gengchiau ; Teong, Hansen ; Lam, Kai-Tak
Author_Institution
Dept. of Electr. & Comput. Eng., Nat. Univ. of Singapore, Singapore
fYear
2009
fDate
27-29 May 2009
Firstpage
1
Lastpage
3
Abstract
The structural effects of different graphene nanoribbon resonant tunneling diodes (GNR-RTDs) are investigated under different temperatures. Although the W-shape structure outperforms the H-shape structure in term of the peak current, the peak-to-valley ratio of the H-shape is higher than the W-shape due to the smaller peak currents of the former. Furthermore, the effects of the channel length and the contact´s bandgap of the W-shape GNR RTDs on device performance are studied and their detailed device physics is also provided in this work.
Keywords
graphene; resonant tunnelling diodes; H-shape structure; W-shape structure; channel length; graphene nanoribbon resonant tunneling diodes; Circuit synthesis; Diodes; HEMTs; Logic circuits; MODFETs; Photonic band gap; Physics; Resonant tunneling devices; Shape; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Computational Electronics, 2009. IWCE '09. 13th International Workshop on
Conference_Location
Beijing
Print_ISBN
978-1-4244-3925-6
Electronic_ISBN
978-1-4244-3927-0
Type
conf
DOI
10.1109/IWCE.2009.5091097
Filename
5091097
Link To Document