Device Characteristics of Trigate-FET with Barrier Constrictions in the Channel

Author

Dehdashti, Nima ; Afzalian, A. ; Lee, C.-W. ; Yan, R. ; Fagas, G. ; Colinge, J.P.

Author_Institution

Tyndall Nat. Inst., Cork

fYear

2009

fDate

27-29 May 2009

Firstpage

1

Lastpage

4

Abstract

We have investigated the effect of symmetric geometrical constrictions on the device characteristics of ultrathin silicon-on-insulator (SOI) nanowire with Trigate structure by means of the full real-space three dimensional Nonequilibrium Greens´s Function (NEGF) method. In this study, geometrical constrictions are introduced as energy barriers near the source and the drain junctions and their strength is modulated by the potential height and the geometry. Interestingly, even at room temperature the drain current in the device shows oscillations as a function of the applied gate voltage. This can be traced to the development of transmission resonances as the channel is additionally confined along the current direction.

Keywords

Green´s function methods; field effect transistors; silicon-on-insulator; barrier constrictions; drain current; drain junctions; real-space three dimensional Nonequilibrium Greens´s Function method; symmetric geometrical constrictions; transmission resonances; trigate-FET; ultrathin silicon-on-insulator nanowire; Carrier confinement; Equations; Fabrication; Geometry; Nanoscale devices; Quantum dots; Silicon on insulator technology; Solid modeling; Temperature; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Computational Electronics, 2009. IWCE '09. 13th International Workshop on

Conference_Location

Beijing

Print_ISBN

978-1-4244-3925-6

Electronic_ISBN

978-1-4244-3927-0

Type

conf

DOI

10.1109/IWCE.2009.5091103

Filename

5091103