Development of narrowband modified uni-travelling-carrier photodiodes with high power efficiency

Author

Qiugui Zhou ; Cross, A.S. ; Yang Fu ; Beling, Andreas ; Campbell, Joe C.

Author_Institution

ECE Dept., Univ. of Virginia, Charlottesville, VA, USA

fYear

2013

fDate

1-3 Oct. 2013

Firstpage

65

Lastpage

66

Abstract

Narrowband high-power photodiodes (PDs) are promising candidates for analog photonic systems including RF antenna transmitter applications and low phase noise photonic oscillators. Our previous work has demonstrated that wideband modified uni-travelling-carrier (MUTC) PDs with cliff layer [1] can achieve high power at high frequency and that their performance can be further enhanced by flip-chip bonding on high thermal conductivity AlN substrates[2,3]. Here we present our recent work on developing narrowband MUTC-PDs to improve power efficiency (η_ρ) and AC Responsivity (R_AC).

Keywords

III-V semiconductors; gallium arsenide; indium compounds; optical elements; optical fabrication; photodiodes; AC responsivity; InGaAs-InP; RF antenna transmitter applications; analog photonic systems; flip-chip bonding; high power efficiency; low phase noise photonic oscillators; narrowband modified unitravelling-carrier photodiodes; optical fabrication; thermal conductivity; Flip-chip devices; Narrowband; Photoconductivity; Photodiodes; Photonics; Power generation; Radio frequency;

fLanguage

English

Publisher

ieee

Conference_Titel

Avionics, Fiber-Optics and Photonics Conference (AVFOP), 2013 IEEE

Conference_Location

San Diego, CA

Print_ISBN

978-1-4244-7346-5

Type

conf

DOI

10.1109/AVFOP.2013.6661625

Filename

6661625