Title :
A 100MHz dual port (DP) MRAM with swing-less bit-line sensing (SLBS) operation for high-end microcomputer systems
Author :
Li, Hu ; Okamura, Leona ; Yoshihara, Tsutomu ; Ooishi, Tsukasa ; Kihara, Yuji
Author_Institution :
Graduate Sch. of Inf., Production & Syst., Waseda Univ., Fukuoka
fDate :
Oct. 18 2006-Sept. 20 2006
Abstract :
In this paper, we propose two kinds of implementations of the dual port MRAM, one of which is for the read/write concurrent operation while another is for the additional simultaneous read operation. Compared with dual port SRAM, the dual port MRAM accompanied with smaller memory cell size will make high performance systems realized in the mobile/robotics field. A swing-less bit-line sensing (SLBS) technique and the static bitline level in the read mode, help to realize the high performance under the condition of Vcc=1.0 V and the operation frequency of 100 MHz
Keywords :
SRAM chips; magnetoresistive devices; microcomputers; 1.0 V; 100 MHz; dual port MRAM; high-end microcomputer systems; magnetoresistive random access memory; memory cell size; mobile-robotics field; read-write concurrent operation; simultaneous read operation; static bitline level; swing-less bit-line sensing operation; Batteries; Cache memory; Decoding; Frequency; Microcomputers; Mobile robots; Production systems; Random access memory; Robot sensing systems; Topology;
Conference_Titel :
Communications and Information Technologies, 2006. ISCIT '06. International Symposium on
Conference_Location :
Bangkok
Print_ISBN :
0-7803-9741-X
Electronic_ISBN :
0-7803-9741-X
DOI :
10.1109/ISCIT.2006.339888
