Title :
Dissipative Quantum Transport using the Pauli Master Equation
Author :
Fu, Bo ; Fischetti, M.V.
Author_Institution :
Electr. & Comput. Eng., Univ. of Massachusetts, Amherst, MA
Abstract :
On the way to develop a complete full-band quantum transport simulation using the Pauli Master Equation, we show our present results on ID n-i-n resistors, ID double barrier resonant tunneling diodes (DBRTD), and 2D double-gate field effect transistors (DGFETs) using a simplified parabolic, spherical effective-mass band-structure model accounting for nonpolar scattering with acoustic (elastic) and optical (inelastic) silicon-like phonons. We also consider the effect of point-like dopants on the access resistance of thin-body double gate devices.
Keywords :
field effect transistors; quantum interference phenomena; resonant tunnelling diodes; 1D double barrier resonant tunneling diodes; 2D double-gate field effect transistors; Pauli master equation; acoustic silicon-like phonons; dissipative quantum transport; nonpolar scattering; optical silicon-like phonons; spherical effective-mass band-structure model; thin-body double gate devices; Acoustic devices; Acoustic scattering; Diodes; Double-gate FETs; Equations; Optical scattering; Particle scattering; Resistors; Resonant tunneling devices; Semiconductor process modeling;
Conference_Titel :
Computational Electronics, 2009. IWCE '09. 13th International Workshop on
Conference_Location :
Beijing
Print_ISBN :
978-1-4244-3925-6
Electronic_ISBN :
978-1-4244-3927-0
DOI :
10.1109/IWCE.2009.5091106
