Dissipative Quantum Transport using the Pauli Master Equation

Author

Fu, Bo ; Fischetti, M.V.

Author_Institution

Electr. & Comput. Eng., Univ. of Massachusetts, Amherst, MA

fYear

2009

fDate

27-29 May 2009

Firstpage

1

Lastpage

4

Abstract

On the way to develop a complete full-band quantum transport simulation using the Pauli Master Equation, we show our present results on ID n-i-n resistors, ID double barrier resonant tunneling diodes (DBRTD), and 2D double-gate field effect transistors (DGFETs) using a simplified parabolic, spherical effective-mass band-structure model accounting for nonpolar scattering with acoustic (elastic) and optical (inelastic) silicon-like phonons. We also consider the effect of point-like dopants on the access resistance of thin-body double gate devices.

Keywords

field effect transistors; quantum interference phenomena; resonant tunnelling diodes; 1D double barrier resonant tunneling diodes; 2D double-gate field effect transistors; Pauli master equation; acoustic silicon-like phonons; dissipative quantum transport; nonpolar scattering; optical silicon-like phonons; spherical effective-mass band-structure model; thin-body double gate devices; Acoustic devices; Acoustic scattering; Diodes; Double-gate FETs; Equations; Optical scattering; Particle scattering; Resistors; Resonant tunneling devices; Semiconductor process modeling;

fLanguage

English

Publisher

ieee

Conference_Titel

Computational Electronics, 2009. IWCE '09. 13th International Workshop on

Conference_Location

Beijing

Print_ISBN

978-1-4244-3925-6

Electronic_ISBN

978-1-4244-3927-0

Type

conf

DOI

10.1109/IWCE.2009.5091106

Filename

5091106