Title :
Effect of Arbitrary Orientation and Strain on Surrounding Gate Transistors
Author :
Tienda-Luna, I.M. ; Ruiz, F.G. ; Godoy, A. ; Gámiz, F.
Author_Institution :
Dept. de Electron. y Tecnol. de Comput., Univ. of Granada, Granada
Abstract :
A variety of techniques can be employed to increase the drive current in CMOS transistors. In this paper, we study the effects of using different wafer orientations and strain methods in surrounding gate transistors. Specifically, we focus on quantum electron density and mobility. A significant modification of both magnitudes is to be expected, due to the changes caused in the effective mass tensor and in the conduction band edge position.
Keywords :
MOSFET; electron density; electron mobility; tensors; CMOS transistors; arbitrary orientation; carrier mobility; conduction band edge position; drive current; effective mass tensor; gate transistors; quantum electron density; strain method; wafer orientation; Capacitive sensors; Effective mass; Electron mobility; Ellipsoids; Equations; Kinetic energy; MOSFETs; Silicon on insulator technology; Size control; Tensile stress;
Conference_Titel :
Computational Electronics, 2009. IWCE '09. 13th International Workshop on
Conference_Location :
Beijing
Print_ISBN :
978-1-4244-3925-6
Electronic_ISBN :
978-1-4244-3927-0
DOI :
10.1109/IWCE.2009.5091108
