DocumentCode
2183293
Title
Effect of Arbitrary Orientation and Strain on Surrounding Gate Transistors
Author
Tienda-Luna, I.M. ; Ruiz, F.G. ; Godoy, A. ; Gámiz, F.
Author_Institution
Dept. de Electron. y Tecnol. de Comput., Univ. of Granada, Granada
fYear
2009
fDate
27-29 May 2009
Firstpage
1
Lastpage
4
Abstract
A variety of techniques can be employed to increase the drive current in CMOS transistors. In this paper, we study the effects of using different wafer orientations and strain methods in surrounding gate transistors. Specifically, we focus on quantum electron density and mobility. A significant modification of both magnitudes is to be expected, due to the changes caused in the effective mass tensor and in the conduction band edge position.
Keywords
MOSFET; electron density; electron mobility; tensors; CMOS transistors; arbitrary orientation; carrier mobility; conduction band edge position; drive current; effective mass tensor; gate transistors; quantum electron density; strain method; wafer orientation; Capacitive sensors; Effective mass; Electron mobility; Ellipsoids; Equations; Kinetic energy; MOSFETs; Silicon on insulator technology; Size control; Tensile stress;
fLanguage
English
Publisher
ieee
Conference_Titel
Computational Electronics, 2009. IWCE '09. 13th International Workshop on
Conference_Location
Beijing
Print_ISBN
978-1-4244-3925-6
Electronic_ISBN
978-1-4244-3927-0
Type
conf
DOI
10.1109/IWCE.2009.5091108
Filename
5091108
Link To Document