DocumentCode :
2183383
Title :
Influence of nano-TiO2 reinforcements on the wettability and interfacial reactions of novel lead-free Sn3.5AgO.5Zn composite solder/Cu solder joints
Author :
Feng, L.P. ; Chang, S.Y. ; Tsao, L.C. ; Wang, F.S.
Author_Institution :
Dept. of Mater. Eng., Nat. Pingtung Univ. of Sci. & Technol., Pingtung, Taiwan
fYear :
2011
fDate :
8-11 Aug. 2011
Firstpage :
1
Lastpage :
4
Abstract :
The influences of intermixing nano-TiO2 particles on the wettability and interfacial reaction of novel lead-free Sn3.5Ag0.5Zn composite solder with Cu substrate were investigated. The wettability of the Sn3.5Ag0.5Zn composite solder alloy was measured by the sessile-drop method under a 10-3 Torr vacuum at different temperature up to 30 mins. Scanning electron microscopy (SEM) was used to quantify the interfacial microstructure for each processing condition. The continuous scallop-type Cu6Sn5 IMC layer was still the only original product at the SAZ solder/Cu and SAZ composite solder/Cu interface at temperature 300 °C. However, a new flat-type QisZrig IMC layer was formed at the Cu6Sn5/Cu interface at temperature 325 °C. The addition of nano-TiO2 particles to the SAZ solder effectively improved in wetting property and corresponding suppressed the growth of the IMC layer at the interface.
Keywords :
composite material interfaces; copper alloys; impact testing; nanoparticles; scanning electron microscopy; silver alloys; solders; tin alloys; tin compounds; wetting; zinc alloys; SEM; Sn-Ag-Zn-Cu; TiO2; composite solder alloy; flat type QisZrig IMC layer; interfacial reaction; lead free composite solder joints; nanoparticle reinforcement; pressure 10 torr to 3 torr; scallop type IMC layer; scanning electron microscopy; sessile drop method; temperature 300 C; time 30 min; wettability reaction; Copper; Lead; Microstructure; Soldering; Substrates; Zinc;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electronic Packaging Technology and High Density Packaging (ICEPT-HDP), 2011 12th International Conference on
Conference_Location :
Shanghai
Print_ISBN :
978-1-4577-1770-3
Electronic_ISBN :
978-1-4577-1768-0
Type :
conf
DOI :
10.1109/ICEPT.2011.6066832
Filename :
6066832
Link To Document :
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