DocumentCode
2183452
Title
Distortion analysis of ultrafast pulses in interconnections on integrated circuits
Author
Sali, S. ; O´Neill, A.G.
Author_Institution
Newcastle upon Tyne Univ., UK
fYear
1990
fDate
28-31 Aug 1990
Firstpage
73
Lastpage
78
Abstract
Transmission line theory is used to develop a model appropriate for interconnects in VLSI. Since ultimate device switching speeds can be no shorter than a few picoseconds, pulse lengths of 5 ps and 50 ps are studied. The case where both ground and signal lines are in the same metallisation layer of the process is studied and geometries appropriate for existing technologies are considered. A comparison of normal and superconducting metallisation is made to assess whether the inclusion of high temperature superconductors is a worthwhile proposition. The transmission matrix method based on ABCD parameters is used to take account of different physical properties or geometric changes along the length of a given line
Keywords
VLSI; metallisation; transmission line theory; IC interconnections; VLSI; metallisation; transmission matrix method; ultrafast pulse distortion analysis;
fLanguage
English
Publisher
iet
Conference_Titel
Electromagnetic Compatibility, 1990. Seventh International Conference on
Conference_Location
York
Print_ISBN
0-85296-001-8
Type
conf
Filename
98034
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