Full-3D Real-Space Simulation of Surface-Roughness Effects in Double-Gate MOSFETs

Author

Buran, Claudio ; Pala, Marco G. ; Mouis, Mireille ; Poli, Stefano

Author_Institution

IMEP-LAHC, Grenoble INP, Grenoble

fYear

2009

fDate

27-29 May 2009

Firstpage

1

Lastpage

4

Abstract

We present numerical simulations of double-gate (DG)-MOSFETs based on a full-3D self-consistent Poisson-Schrodinger algorithm within the real-space non equilibrium Green´s function (NEGF) approach. We include a geometrical description of surface roughness (SR) via an exponential auto-correlation law. In order to simulate rough planar structures we adopt periodic boundary conditions along one of the transverse directions. Transfer characteristics are computed for different realistic values of the root mean square (RMS) of spatial fluctuations whereas SR-limited mobility, which is extracted from effective mobility after subtraction of the ballistic component, presents a non monotonic dependence on the inversion charge density.

Keywords

Green´s function methods; MOSFET; Poisson equation; Schrodinger equation; mean square error methods; surface roughness; Poisson-Schrodinger algorithm; SR-limited mobility; autocorrelation law; double-gate MOSFET; full-3D real-space simulation; geometrical description; inversion charge density; realspace nonequilibrium Green´s function; root mean square; rough planar structure; surface-roughness effect; transfer characteristics; Autocorrelation; Boundary conditions; Computational modeling; Green´s function methods; MOSFETs; Numerical simulation; Periodic structures; Rough surfaces; Strontium; Surface roughness;

fLanguage

English

Publisher

ieee

Conference_Titel

Computational Electronics, 2009. IWCE '09. 13th International Workshop on

Conference_Location

Beijing

Print_ISBN

978-1-4244-3925-6

Electronic_ISBN

978-1-4244-3927-0

Type

conf

DOI

10.1109/IWCE.2009.5091115

Filename

5091115