DocumentCode :
21836
Title :
Advances on the Stress Interaction Model
Author :
Lewitschnig, Horst
Author_Institution :
Infineon Technol. Austria AG, Villach, Austria
Volume :
64
Issue :
1
fYear :
2015
fDate :
Mar-15
Firstpage :
528
Lastpage :
534
Abstract :
In a reliability experiment, a combination of temperature cycling (TC) and temperature humidity bias (THB) stress was applied. The outcome varied significantly with the sequence of the stress tests. It made a difference whether first TC-stress was performed and then THB-stress, or the other way round. A statistical model is created for this effect. It is called the Stress Interaction Model. The stress sequence is given as a path in BBR2. The hazard function is set up as a vector field. Unless the hazard function is a potential of a vector field, the path integral depends on the way from point A to point B. In this setup, the sequence of the applied stress tests, say the stress history, is reflected in the reliability function. In this paper, the Stress Interaction Model is extended by a shape factor.
Keywords :
semiconductor device reliability; semiconductor device testing; statistical analysis; stress effects; thermal management (packaging); THB stress; hazard function; reliability experiment; reliability function; statistical model; stress interaction model; stress sequence; temperature cycling stress; temperature humidity bias stress; Hazards; Humidity; Reliability theory; Shape; Stress; Vectors; Random variables; reliability theory; semiconductor device reliability; statistical distributions; stochastic processes;
fLanguage :
English
Journal_Title :
Reliability, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9529
Type :
jour
DOI :
10.1109/TR.2014.2363151
Filename :
6942218
Link To Document :
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