Title :
Mobility Study of Polycrystalline MgZnO/ZnO Thin Film Layers with Monte Carlo Method
Author :
Huang, Chih-I ; Wu, Yuh-Renn ; Cheng, I-Chun ; Chen, Jian Z. ; Chiu, Kuo-Chuang ; Lin, Tzer-Shen
Author_Institution :
Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei
Abstract :
The study of transparent conducting oxide (TCO) has become an important area due to the applications of lighting and display technology. Therefore, high mobility and conductivity TCO materials would be a key issue to the industry. In this paper, we have applied the Monte Carlo method to analyze the mobility of single and poly-crystalline MgZnO/ZnO thin film layer. The effects of grain boundary scattering, ionized impurity scattering as well as phonon scattering have been included in our program. The grain boundary potential size and carrier screening effect has been analyzed with our developed 2D Poisson and drift-diffusion solver. With a careful design of modulation doping and including the effect of spontaneous and piezoelectric polarization, the grain boundary potential can be suppressed and thus the mobility of the ZnO layer can be improved.
Keywords :
II-VI semiconductors; Monte Carlo methods; carrier mobility; diffusion; doping profiles; electrical conductivity; grain boundaries; magnesium compounds; multilayers; phonons; semiconductor doping; semiconductor thin films; wide band gap semiconductors; zinc compounds; 2D Poisson solver; MgZnO-ZnO; Monte Carlo method; carrier screening effect; conductivity; display technology; drift-diffusion solver; grain boundary potential size; high mobility; lighting technology; modulation doping; phonon scattering; piezoelectric polarization; polycrystalline thin film layers; transparent conducting oxide; Conducting materials; Conductivity; Displays; Epitaxial layers; Grain boundaries; Impurities; Light scattering; Phonons; Transistors; Zinc oxide;
Conference_Titel :
Computational Electronics, 2009. IWCE '09. 13th International Workshop on
Conference_Location :
Beijing
Print_ISBN :
978-1-4244-3925-6
Electronic_ISBN :
978-1-4244-3927-0
DOI :
10.1109/IWCE.2009.5091118