Title :
Analysis of the breakdown of the IQHE in wide GaAs/AlGaAs heterostructures
Author :
Boella, G. ; Cordiali, L. ; Marullo-Reedtz, G. ; Allasia, D. ; Rinaudo, G. ; Truccato, M. ; Villavecchia, C.
Author_Institution :
IEN Galileo Ferraris, Torino, Italy
fDate :
June 27 1994-July 1 1994
Abstract :
The breakdown of the integral quantum Hall effect (IQHE) at high current is studied in wide high quality GaAs/AlGaAs heterostructures on the i=2 and i=4 Hall plateaux. Pronounced steps in the longitudinal resistance are observed with rich time structures, which are analyzed with different techniques.<>
Keywords :
III-V semiconductors; aluminium compounds; electric breakdown of solids; electric resistance measurement; gallium arsenide; quantum Hall effect; semiconductor junctions; units (measurement); GaAs-AlGaAs; GaAs/AlGaAs heterostructures; IQHE; electric breakdown; electric resistance unit; integral quantum Hall effect; longitudinal resistance; measurement unit; time averaged measurement; Breakdown voltage; Current measurement; Density measurement; Electric breakdown; Electric variables measurement; Electrical resistance measurement; Gallium arsenide; Length measurement; Magnetic field measurement; Magnetic hysteresis;
Conference_Titel :
Precision Electromagnetic Measurements, 1994. Digest., 1994 Conference on
Conference_Location :
Boulder, CO, USA
Print_ISBN :
0-7803-1984-2
DOI :
10.1109/CPEM.1994.333261
