Title :
A high precision comparison of the quantized Hall resistance of MOSFET and GaAs/AlGaAs heterostructure devices [measurement units application]
Author :
Jeckelmann, B. ; Inglis, A.D. ; Jeanneret, B.
Author_Institution :
Swiss Federal Office of Metrol., Wabern, Switzerland
fDate :
June 27 1994-July 1 1994
Abstract :
We report comprehensive high precision direct and indirect comparisons of MOSFET and GaAs heterostructure quantized Hall resistors, and of steps 1, 2, 3, 4 and 6 for heterostructure devices. We find no difference between the MOSFET and the heterostructure Hall resistance at a level of better than 1 part in 10/sup 9/ (ppb).<>
Keywords :
III-V semiconductors; aluminium compounds; electric resistance measurement; gallium arsenide; insulated gate field effect transistors; measurement standards; quantum Hall effect; semiconductor junctions; units (measurement); GaAs-AlGaAs; GaAs/AlGaAs heterostructure devices; MOSFET; direct comparison; heterostructure Hall resistance; indirect comparison; quantized Hall resistance; Councils; Design for manufacture; Electric resistance; Electrons; Gallium arsenide; MOSFET circuits; Measurement standards; Metrology; Resistors; Voltage;
Conference_Titel :
Precision Electromagnetic Measurements, 1994. Digest., 1994 Conference on
Conference_Location :
Boulder, CO, USA
Print_ISBN :
0-7803-1984-2
DOI :
10.1109/CPEM.1994.333266
