Multi Subband Deterministic Simulation of an Ultra-thin Double Gate MOSFET with 2D Electron Gas

Author

Tiao Lu ; Gang Du ; Haiyan Jiang ; Xiaoyan Liu ; Pingwen Zhang

Author_Institution

Sch. of Math. Sci., Peking Univ., Beijing

fYear

2009

fDate

27-29 May 2009

Firstpage

1

Lastpage

4

Abstract

We present a self-consistent multi subband deterministic solver of the Boltzmann transport equation of the two dimensional (2D) electron gas. The Schodinger equation at each slice in the confinement direction and the two dimensional Poisson equation are self-consistently solved with the Boltzmann transport equation. The energy quantization and the scattering of the 2D electron gas are included. We apply this solver to an ultra-thin body double gate MOSFET and show the influence of the 2Dk scattering to the electron transport.

Keywords

Boltzmann equation; MOSFET; Poisson equation; Schrodinger equation; electron gas; 2D electron gas; Boltzmann transport equation; Schodinger equation; confinement direction; electron transport; multisubband deterministic simulation; two dimensional Poisson equation; ultra-thin double gate MOSFET; Boltzmann equation; Distribution functions; Effective mass; Electrons; MOSFET circuits; Mathematics; Microelectronics; Particle scattering; Poisson equations; Quantization;

fLanguage

English

Publisher

ieee

Conference_Titel

Computational Electronics, 2009. IWCE '09. 13th International Workshop on

Conference_Location

Beijing

Print_ISBN

978-1-4244-3925-6

Electronic_ISBN

978-1-4244-3927-0

Type

conf

DOI

10.1109/IWCE.2009.5091125

Filename

5091125