Title :
High thermal conductive BT resin/silicon nitride composites
Author :
Zeng, XiaoLiang ; Yu, Shuhui ; Sun, Rong ; Du, Ruxu
Author_Institution :
Shenzhen Inst. of Adv. Technol., Shenzhen, China
Abstract :
In this study, thermally conductive bismaleimide-triazine resin (BT)/silicon nitride (Si3N4) composites have been developed. The effect of Si3N4 particles loading on thermal conductivity, glass transition temperature (Tg) and thermal stability of the composites was investigated. It was found that the BT/ Si3N4 composites showed increase in thermal conductivity with Si3N4 weight fraction. The thermal conductivity of the BT/Si3N4 composites was up to 0.94 W/m.K, for a mixture containing 50 wt% of micro Si3N4 fillers in the BT resins matrix, which was about 5 times larger than the pure BT resin. Moreover, the BT/Si3N4 composites had excellent thermal properties. The Tg values were above 180°C, and thermal decomposition temperatures were over 370°C. The resulting composite with excellent thermal properties can be utilized in high temperature micro-fabrication of heat dissipative components in microelectronic industry.
Keywords :
composite materials; materials preparation; polymers; resins; silicon compounds; thermal conductivity; thermal stability; Si3N4; dissipative components; glass transition temperature; high temperature microfabrication; high thermal conductive BT resin; microelectronic industry; silicon nitride composites; thermal conductivity; thermal decomposition temperatures; thermal properties; thermal stability; thermally conductive bismaleimide-triazine resin; weight fraction; Conductivity; Electronic packaging thermal management; Loading; Polymers; Resins; Thermal conductivity; Thermal stability;
Conference_Titel :
Electronic Packaging Technology and High Density Packaging (ICEPT-HDP), 2011 12th International Conference on
Conference_Location :
Shanghai
Print_ISBN :
978-1-4577-1770-3
Electronic_ISBN :
978-1-4577-1768-0
DOI :
10.1109/ICEPT.2011.6066849