DocumentCode
2183879
Title
Nanostructured gas sensors by electron beam evaporation
Author
Wongchoosuk, Chatchawal ; Wisitsoraat, A. ; Tuantranont, Adisom ; Kerdcharoen, Teerakiat
Author_Institution
Dept. of Phys. & Center of Nanosci. & Nanotechnol., Mahidol Univ., Bangkok, Thailand
fYear
2011
fDate
17-19 May 2011
Firstpage
10
Lastpage
13
Abstract
Electron beam (E-beam) evaporation process offers extensive possibilities for controlling film structure and morphology with desired properties such as dense coating, high thermal efficiency, low contamination, high reliability and high productivity. In this work, we have applied the E-beam process to fabricate nanostructured gas sensors, i.e., WO3, SnO2, CNT WO3, CNT-SnO2. The nanostructure sensing elements were characterized by scanning electron microscopy and transmission electron microscopy. Various gases with variable concentrations were used to test the sensing properties and selectivity of the gas sensors at different operating temperatures. Based on the operating temperatures within a range of 350-400°C, the SnO2 and WO3 gas sensors were found to exhibit good response to alcohol and hydrogen, respectively. Doping CNT in SnO2 and WO3 dramatically improves the sensitivity and selectivity of the gas sensors. Moreover, CNT can reduce the operating temperature (from around 350-400°C to 250°C) leading to reduction in power consumption which is one of the major problems for metal oxide gas sensor. The sensing mechanism of these gas sensors will be demonstrated.
Keywords
carbon nanotubes; electron beam deposition; gas sensors; hydrogen; nanosensors; organic compounds; scanning electron microscopy; tin compounds; transmission electron microscopy; tungsten compounds; vacuum deposition; C-SnO2; C-WO3; H2; SnO2; WO3; alcohol; doping; electron beam evaporation; hydrogen; nanostructure sensing element; nanostructured gas sensors; scanning electron microscopy; selectivity; sensitivity; temperature 350 C to 400 C; transmission electron microscopy; Films; Sensors; CNT; E-beam; Gas sensor; Metal Oxide; SnO2 ; WO3 ;
fLanguage
English
Publisher
ieee
Conference_Titel
Electrical Engineering/Electronics, Computer, Telecommunications and Information Technology (ECTI-CON), 2011 8th International Conference on
Conference_Location
Khon Kaen
Print_ISBN
978-1-4577-0425-3
Type
conf
DOI
10.1109/ECTICON.2011.5947757
Filename
5947757
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