Numerical Analysis of Transport Properties of Boron-Doped Graphene FETs

We have performed a numerical investigation of the effect of boron doping on the dispersion relations of armchair graphene nanoribbons, finding that it should reduce the strong variability of the energy gap predicted for atomic-scale fluctuations of the nanoribbon width. We also present the transport characteristics that we have obtained, within a self-consistent Non Equilibrium Green´s Function (NEGF) simulation, for a field-effect transistor based on boron-doped graphene nanoribbons. As a consequence of doping, mobility, and thus the current through the device, are suppressed, but there seems to be a possibility to mitigate this adverse effect, by locating the dopants near the edges of the nanoribbon, their energetically favored position.