Title :
On the Validity of the Top of the Barrier Quantum Transport Model for Ballistic Nanowire MOSFETs
Author :
Paul, Abhijeet ; Mehrotra, Saumitra ; Klimeck, Gerhard ; Luisier, Mathieu
Author_Institution :
Network for Comput. Nanotechnol. & Birck Nanotechnol. Center, Purdue Univ., West Lafayette, IN
Abstract :
This work focuses on the determination of the valid device domain for the use of the Top of the barrier (ToB) model to simulate quantum transport in nanowire MOSFETs in the ballistic regime. The presence of a proper Source/Drain barrier in the device is an important criterion for the applicability of the model. Long channel devices can be accurately modeled under low and high drain bias with DIBL adjustment.
Keywords :
MOSFET; ballistic transport; nanowires; DIBL adjustment; ballistic nanowire MOSFETs; ballistic transport; barrier quantum transport model; channel devices; source-drain barrier; Computational modeling; Computer networks; FETs; MOSFETs; Nanoscale devices; Nanotechnology; Quantum computing; Semiconductor device modeling; Silicon; Tunneling;
Conference_Titel :
Computational Electronics, 2009. IWCE '09. 13th International Workshop on
Conference_Location :
Beijing
Print_ISBN :
978-1-4244-3925-6
Electronic_ISBN :
978-1-4244-3927-0
DOI :
10.1109/IWCE.2009.5091134
