DocumentCode
2184016
Title
On the Validity of the Top of the Barrier Quantum Transport Model for Ballistic Nanowire MOSFETs
Author
Paul, Abhijeet ; Mehrotra, Saumitra ; Klimeck, Gerhard ; Luisier, Mathieu
Author_Institution
Network for Comput. Nanotechnol. & Birck Nanotechnol. Center, Purdue Univ., West Lafayette, IN
fYear
2009
fDate
27-29 May 2009
Firstpage
1
Lastpage
4
Abstract
This work focuses on the determination of the valid device domain for the use of the Top of the barrier (ToB) model to simulate quantum transport in nanowire MOSFETs in the ballistic regime. The presence of a proper Source/Drain barrier in the device is an important criterion for the applicability of the model. Long channel devices can be accurately modeled under low and high drain bias with DIBL adjustment.
Keywords
MOSFET; ballistic transport; nanowires; DIBL adjustment; ballistic nanowire MOSFETs; ballistic transport; barrier quantum transport model; channel devices; source-drain barrier; Computational modeling; Computer networks; FETs; MOSFETs; Nanoscale devices; Nanotechnology; Quantum computing; Semiconductor device modeling; Silicon; Tunneling;
fLanguage
English
Publisher
ieee
Conference_Titel
Computational Electronics, 2009. IWCE '09. 13th International Workshop on
Conference_Location
Beijing
Print_ISBN
978-1-4244-3925-6
Electronic_ISBN
978-1-4244-3927-0
Type
conf
DOI
10.1109/IWCE.2009.5091134
Filename
5091134
Link To Document