Title :
Trimming lithography part II: An effect of trimming distance to the sub-resolution pattern quality
Author :
Sriklat, Arreerat ; Atthi, Nithi ; Jeamsaksiri, Wutthinan ; Hruanun, Charndet ; Poyai, Arnporn ; Silapunt, Rardchawadee
Author_Institution :
Dept. of Electron. & Telecommun. Eng., King Mongkut´´s Univ. of Technol. Thonburi, Bangkok, Thailand
Abstract :
Trimming lithography acts as one of the candidates for next generation lithography. The pattern size can be scaled by adjusting the trim distance that is much bigger than an original design linewidth. The photoresist feature size can be scaled down to 0.18 μm with the 0.9 μm mask and the 0.5 μm resolution exposure tool. However, a pattern density of the line/space pattern is lower than that of other patterning techniques. Different pattern qualities between dense and isolated patterns are explained by a diffraction of the waveform transmitted through the mask slit.
Keywords :
lithography; photoresists; line/space pattern; next generation lithography; pattern density; patterning techniques; photoresist; resolution exposure tool; size 0.18 mum; size 0.5 mum; size 0.9 mum; sub-resolution pattern quality; trimming distance; trimming lithography; Moore´s law; Next generation lithography; Pattern shrinkage; Sub-resolution patterning; Trimming lithography;
Conference_Titel :
Electrical Engineering/Electronics, Computer, Telecommunications and Information Technology (ECTI-CON), 2011 8th International Conference on
Conference_Location :
Khon Kaen
Print_ISBN :
978-1-4577-0425-3
DOI :
10.1109/ECTICON.2011.5947767
