Title :
Performance Analysis of Graphene Bilayer Transistors Through Tight-Binding Simulations
Author :
Fiori, Gianluca ; Iannaccone, Giuseppe
Author_Institution :
Dipt. Ing. dell´´Inf.: Elettron., Inf. e Telecomun., Univ. di Pisa, Pisa
Abstract :
A simulation study of a tunable-gap bilayer graphene FET with independent gates is performed with a numerical solver based on the self-consistent solution of the Poisson and Schrodinger equations within the NEGF formalism. The applied vertical field manages to induce an energy gap, but its value is not large enough to suppress band-to-band tunneling and to obtain acceptable ION/IOFF ratio for CMOS device operation.
Keywords :
Poisson equation; Schrodinger equation; field effect transistors; graphene; CMOS device; NEGF formalism; Poisson equations; Schrodinger equations; band-to-band tunneling; tight-binding simulations; tunable-gap bilayer graphene FET; Analytical models; Atomic layer deposition; FETs; Green´s function methods; Lithography; Performance analysis; Poisson equations; Semiconductor materials; Telecommunications; Uniform resource locators;
Conference_Titel :
Computational Electronics, 2009. IWCE '09. 13th International Workshop on
Conference_Location :
Beijing
Print_ISBN :
978-1-4244-3925-6
Electronic_ISBN :
978-1-4244-3927-0
DOI :
10.1109/IWCE.2009.5091138
