• DocumentCode
    2184104
  • Title

    Performance Analysis of Graphene Bilayer Transistors Through Tight-Binding Simulations

  • Author

    Fiori, Gianluca ; Iannaccone, Giuseppe

  • Author_Institution
    Dipt. Ing. dell´´Inf.: Elettron., Inf. e Telecomun., Univ. di Pisa, Pisa
  • fYear
    2009
  • fDate
    27-29 May 2009
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    A simulation study of a tunable-gap bilayer graphene FET with independent gates is performed with a numerical solver based on the self-consistent solution of the Poisson and Schrodinger equations within the NEGF formalism. The applied vertical field manages to induce an energy gap, but its value is not large enough to suppress band-to-band tunneling and to obtain acceptable ION/IOFF ratio for CMOS device operation.
  • Keywords
    Poisson equation; Schrodinger equation; field effect transistors; graphene; CMOS device; NEGF formalism; Poisson equations; Schrodinger equations; band-to-band tunneling; tight-binding simulations; tunable-gap bilayer graphene FET; Analytical models; Atomic layer deposition; FETs; Green´s function methods; Lithography; Performance analysis; Poisson equations; Semiconductor materials; Telecommunications; Uniform resource locators;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Computational Electronics, 2009. IWCE '09. 13th International Workshop on
  • Conference_Location
    Beijing
  • Print_ISBN
    978-1-4244-3925-6
  • Electronic_ISBN
    978-1-4244-3927-0
  • Type

    conf

  • DOI
    10.1109/IWCE.2009.5091138
  • Filename
    5091138
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2184104