Three-dimensional numerical simulation of electrostatic discharge sensitivity for phase-change memories

The sensitivity to electrostatic discharge (ESD) events of the phase change memory was investigated by using a three-dimensional finite element modeling based on electrothermal physics. Analytical storage elements were tested on μ-trench structure during three ESD models stress, IIBM model, MM model, and CDM model. It was found that the phase-change memory cell is failure when All ESD model voltage stress lower than 5V. The phase change memory cell must then be considered as very sensitive class-0 devices for HBM model, class-M1 for MM model and class-C1 for CDM model.