DocumentCode :
2184234
Title :
Design, fabrication of through silicon vias based on suspended photoresist thin film and its application in silicon interposer
Author :
Wu, Ziyang ; Dou, Chuanguo ; Wu, Yanhong ; Yang, Heng
Author_Institution :
State Key Lab. of Transducer Technol., Shanghai, China
fYear :
2011
fDate :
8-11 Aug. 2011
Firstpage :
1
Lastpage :
4
Abstract :
This paper presents a novel fabrication method of through silicon vias (TSVs) based on suspended photoresist thin film. The AZ5214 photoresist thin film is self-assembled on the deionized (DI) water surface, then the film is transferred onto the wafer surface and patterned by photolithography to form the cover plates on the through-vias. After a Cu seed layer is deposited and the photoresist film is chemically removed, the through-vias are filled by Cu electroplating. The process steps, characterization and the feasibility are analyzed in our experiment. According to this approach, one of its applications in silicon interposer is provided and the processes are discussed.
Keywords :
copper; electroplating; elemental semiconductors; photoresists; silicon; thin films; three-dimensional integrated circuits; AZ5214 photoresist thin film; Cu; Cu electroplating; Si; cover plates; deionized water surface; photolithography; seed layer; silicon interposer; suspended photoresist thin film; through silicon via fabrication; Copper; Fabrication; Packaging; Resists; Silicon; Surface treatment; Three dimensional displays;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electronic Packaging Technology and High Density Packaging (ICEPT-HDP), 2011 12th International Conference on
Conference_Location :
Shanghai
Print_ISBN :
978-1-4577-1770-3
Electronic_ISBN :
978-1-4577-1768-0
Type :
conf
DOI :
10.1109/ICEPT.2011.6066862
Filename :
6066862
Link To Document :
بازگشت