• DocumentCode
    2184234
  • Title

    Design, fabrication of through silicon vias based on suspended photoresist thin film and its application in silicon interposer

  • Author

    Wu, Ziyang ; Dou, Chuanguo ; Wu, Yanhong ; Yang, Heng

  • Author_Institution
    State Key Lab. of Transducer Technol., Shanghai, China
  • fYear
    2011
  • fDate
    8-11 Aug. 2011
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    This paper presents a novel fabrication method of through silicon vias (TSVs) based on suspended photoresist thin film. The AZ5214 photoresist thin film is self-assembled on the deionized (DI) water surface, then the film is transferred onto the wafer surface and patterned by photolithography to form the cover plates on the through-vias. After a Cu seed layer is deposited and the photoresist film is chemically removed, the through-vias are filled by Cu electroplating. The process steps, characterization and the feasibility are analyzed in our experiment. According to this approach, one of its applications in silicon interposer is provided and the processes are discussed.
  • Keywords
    copper; electroplating; elemental semiconductors; photoresists; silicon; thin films; three-dimensional integrated circuits; AZ5214 photoresist thin film; Cu; Cu electroplating; Si; cover plates; deionized water surface; photolithography; seed layer; silicon interposer; suspended photoresist thin film; through silicon via fabrication; Copper; Fabrication; Packaging; Resists; Silicon; Surface treatment; Three dimensional displays;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electronic Packaging Technology and High Density Packaging (ICEPT-HDP), 2011 12th International Conference on
  • Conference_Location
    Shanghai
  • Print_ISBN
    978-1-4577-1770-3
  • Electronic_ISBN
    978-1-4577-1768-0
  • Type

    conf

  • DOI
    10.1109/ICEPT.2011.6066862
  • Filename
    6066862