DocumentCode
2184234
Title
Design, fabrication of through silicon vias based on suspended photoresist thin film and its application in silicon interposer
Author
Wu, Ziyang ; Dou, Chuanguo ; Wu, Yanhong ; Yang, Heng
Author_Institution
State Key Lab. of Transducer Technol., Shanghai, China
fYear
2011
fDate
8-11 Aug. 2011
Firstpage
1
Lastpage
4
Abstract
This paper presents a novel fabrication method of through silicon vias (TSVs) based on suspended photoresist thin film. The AZ5214 photoresist thin film is self-assembled on the deionized (DI) water surface, then the film is transferred onto the wafer surface and patterned by photolithography to form the cover plates on the through-vias. After a Cu seed layer is deposited and the photoresist film is chemically removed, the through-vias are filled by Cu electroplating. The process steps, characterization and the feasibility are analyzed in our experiment. According to this approach, one of its applications in silicon interposer is provided and the processes are discussed.
Keywords
copper; electroplating; elemental semiconductors; photoresists; silicon; thin films; three-dimensional integrated circuits; AZ5214 photoresist thin film; Cu; Cu electroplating; Si; cover plates; deionized water surface; photolithography; seed layer; silicon interposer; suspended photoresist thin film; through silicon via fabrication; Copper; Fabrication; Packaging; Resists; Silicon; Surface treatment; Three dimensional displays;
fLanguage
English
Publisher
ieee
Conference_Titel
Electronic Packaging Technology and High Density Packaging (ICEPT-HDP), 2011 12th International Conference on
Conference_Location
Shanghai
Print_ISBN
978-1-4577-1770-3
Electronic_ISBN
978-1-4577-1768-0
Type
conf
DOI
10.1109/ICEPT.2011.6066862
Filename
6066862
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